It was nearly 80 years ago, when J.E Lilienfield patented the first ever field effect transistor concept, namely “Method and Apparatus for Controlling Electric Currents” which evolved into the modern metal-oxide-semiconductor field effect transistor, MOSFET.
Lilienfield proposed a three terminal device where the source to drain current is controlled by a field effect from the gate and is dielectrically insulated from the rest of the device. The active part of the device was built on a thin semiconductor film deposited on an insulator.
Be it or not a coincidence, the first proposed FET was indeed, a semiconductor-on-insulator device.
Lilienfield proposed a three terminal device where the source to drain current is controlled by a field effect from the gate and is dielectrically insulated from the rest of the device. The active part of the device was built on a thin semiconductor film deposited on an insulator.
Be it or not a coincidence, the first proposed FET was indeed, a semiconductor-on-insulator device.
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